可控硅-ic网免费信息

可控硅

发表于：2014-06-11 类别： [热卖]

GENERAL DESCRIPTION:

Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general

purpose bidirectional switching and phase control application, where high sensitivity is

required in all for quadrants.

QUICK REFERENCE DATA:

SYMBOL
PARAMETER
MAX
MAX
UNIT
136-
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
600E
800E
VDRM
IT(RMS)
ITSM
600
800
V
4
4
A
25
25
A

STATIC CHARACTERISTICS：

SYMBOL	PARAMETER	CONDITION		MIN	TYP	MAX	UNIT
IGT	Gate trigger current	VD=12V, IT=0.1A	T2+G+	-	2.5	10	mA
			T2+G-	-	4.0	10	mA
			T2-G-	-	5.0	10	mA
			T2-G+	-	11	25	mA
VGT	Gate trigger current	VD=12V, IT=0.1A		-	0.7	1.5	V
		VD=400V, IT=0.1A,Tj=125℃		0.25	0.4	-	V
dVD/dt	Critical rate of rise of off-state voltage	VD=67%VDRM(max) ,Tj=125℃ exponential waveform, gate open circuit			50	-	V/us
tgt	Gate controlled turn-ontime	ITM=1.5A, VD=VDRM(max), IG=0.1A, dIG/dt=5A/us		-	2	-	us

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深圳市高科特半导体有限公司

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